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SSM6N7002AFU Complex FET 60V 200mA/0.2A SOT-363/SC70-6/UF6 marking NK high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
200mA/0.2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
3Ω@ VGS = 10V, ID = 500mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1.0~2.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N Channel MOS Type • High-Speed Switching Applications • Analog Switch Applications • Small package • Low ON-resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •模拟开关应用 •小型封装 •低导通电阻:RON =3.3Ω(最大值)(@ VGS= 4.5 V) RON=3.2Ω(最大)(@ VGS= 5 V) :RON =3.0Ω(最大值)(@ VGS= 10 V)
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