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TPCF8B01 complex FET MOSFET+schottky diode -20V -2.7A 1A 0.46V 1206-8/vs-8 marking F8A low Rds/low leakage current/low forward voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage
P沟道 P-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
8V
源漏极导通电阻Rds
Drain-Source On-State Resistance
-2.7A
开启电压Vgs(th)
Gate-Source Threshold Voltage
110mΩ@ VGS = -4.5V, ID = -1.4mA
耗散功率Pd
Power Dissipation
-0.5~-1.2V
Description & Applications肖特基二极管SBD Schottky Barrier Diodes
描述与应用20V
List of related models

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