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SI2303CDS MOSFET P-Channel -30V -2.7A 0.156ohm SOT-23 marking N3
最大源漏极电压Vds Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -2.7A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.156Ω @-1.9A,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1--3.0V |
耗散功率Pd Power Dissipation | 2.3W |
Description & Applications | FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |
描述与应用 | Power MOSFET • 100 % Rg Tested • 100 % UIS Tested |