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CPH6424-TL-E MOSFET N-Channel 60V 3A SOT-163/SOT23-6/CPH6 marking ZA high density battery designvery low RDS(ON)
最大源漏极电压Vds Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
最大漏极电流Id Drain Current | 3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.145Ω/Ohm @1.5A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.2V |
耗散功率Pd Power Dissipation | 1.6W |
Description & Applications | · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. |
描述与应用 | •低导通电阻。 •超高速开关。 •2V驱动 |