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CXT5401 PNP transistors(BJT) -160V -500mA/-0.5A 100~300MHz 60~240 -500mV/-0.5V SOT-89/SC-62 marking CXT5401 high voltageamplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-160V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−150V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
100~300MHz
直流电流增益hFE
DC Current Gain(hFE)
60~240
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
1.2W
Description & ApplicationsSURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401 type is an PNP silicon transistor manufactured bythe epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
描述与应用表面贴装PNP硅晶体管 产品描述: 中央半导体CXT5401型的PNP硅晶体管所生产外延平面工艺,在一个表面贴装封装,高电压放大器应用设计的环氧模。
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