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SSM6N17FU Complex FET 50V 100mA/0.1A SOT-363/SC70-6/UF6 marking DM high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 7V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 20Ω@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.9~1.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ●Suitable for high-density mounting due to compact package ●High drain-source voltage ●High speed switching |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 模拟开关应用 ●适用于高密度安装由于紧凑的封装 ●高的漏源电压 ●高速开关 |
