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UP01213GOLBF NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=80 R1=R2=47KΩ SOT-563 marking 9L switch and digital circuit application

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 50V
Collector-Emitter Voltage(VCEO) Q1/Q2 50V
Collector Current(IC) Q1/Q2 100mA
Q1 Input Resistance(R1) 47KΩ
Q1 Base-Emitter Resistance(R2) 47KΩ
Q1(R1/R2) Q1 Resistance Ratio 1
Q2 Input Resistance(R1) 47KΩ
 Base-Emitter Resistance(R2) 47KΩ
(R1/R2) Q2 Resistance Ratio 1
DC Current Gain(hFE) Q1/Q2 80/80
 Transtion Frequency(fT) Q1/Q2 150MHZ/150MHZ
 Power Dissipation Q1/Q2 125MW/0.125W
Description & Applications Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half.
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