UP01213GOLBF NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=80 R1=R2=47KΩ SOT-563 marking 9L switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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UP01213GOLBF NPN+NPN Complex Bipolar Transistor 50V 100mA HEF=80 R1=R2=47KΩ SOT-563 marking 9L switch and digital circuit application

Model：UP01213GOLBF
Mark / screen / code / typing：9L
Manufacturer：
Date Code：08NOPB
Package：SOT-563
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO) Q1/Q2	50V
Collector-Emitter Voltage(VCEO) Q1/Q2	50V
Collector Current(IC) Q1/Q2	100mA
Q1 Input Resistance(R1)	47KΩ
Q1 Base-Emitter Resistance(R2)	47KΩ
Q1(R1/R2) Q1 Resistance Ratio	1
Q2 Input Resistance(R1)	47KΩ
Base-Emitter Resistance(R2)	47KΩ
(R1/R2) Q2 Resistance Ratio	1
DC Current Gain(hFE) Q1/Q2	80/80
Transtion Frequency(fT) Q1/Q2	150MHZ/150MHZ
Power Dissipation Q1/Q2	125MW/0.125W
Description & Applications	Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half.

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