My order
Share to:  
Location:Home > Stock Inventory > Product Details

MTM6841109SO Complex FET -12V -4.8A 1206-8/vs-8 marking 1D load switch 1.8V drive

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-4.8A
源漏极导通电阻Rds
Drain-Source On-State Resistance
60mΩ@ VGS = -1.8V, ID = -200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.3~-1V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsFor load switch circuits For switching circuits Feature Dual P-channel MOS FET in one package Low drive voltage:1.8V drive
描述与应用对于负载开关电路 对于开关电路 特点 双P沟道MOS场效应管在一个封装中 低驱动电压:1.8V驱动
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00