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MTM6841109SO Complex FET -12V -4.8A 1206-8/vs-8 marking 1D load switch 1.8V drive
最大源漏极电压Vds Drain-Source Voltage | -12V |
最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
最大漏极电流Id Drain Current | -4.8A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 60mΩ@ VGS = -1.8V, ID = -200mA |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.3~-1V |
耗散功率Pd Power Dissipation | 1W |
Description & Applications | For load switch circuits For switching circuits Feature Dual P-channel MOS FET in one package Low drive voltage:1.8V drive |
描述与应用 | 对于负载开关电路 对于开关电路 特点 双P沟道MOS场效应管在一个封装中 低驱动电压:1.8V驱动 |