MTM6841109SO Complex FET -12V -4.8A 1206-8/vs-8 marking 1D load switch 1.8V drive|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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MTM6841109SO Complex FET -12V -4.8A 1206-8/vs-8 marking 1D load switch 1.8V drive

Model：MTM6841109SO
Mark / screen / code / typing：1d
Manufacturer：
Date Code：09NOPB 09+NOPB
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-12V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-4.8A
源漏极导通电阻Rds Drain-Source On-State Resistance	60mΩ@ VGS = -1.8V, ID = -200mA
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.3~-1V
耗散功率Pd Power Dissipation	1W
Description & Applications	For load switch circuits For switching circuits Feature Dual P-channel MOS FET in one package Low drive voltage:1.8V drive
描述与应用	对于负载开关电路对于开关电路特点双P沟道MOS场效应管在一个封装中低驱动电压：1.8V驱动

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