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2SD2623GRL NPN Transistors(BJT) 25V 500mA/0.5A 200MHz 200~350 140mV/0.14V SOT-323/SC-70 marking 2V low-frequency amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
200~350
管压降VCE(sat)
Collector-Emitter Saturation Voltage
140mV/0.14V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsSilicon NPN epitaxial planar type For low-frequency amplification Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
描述与应用NPN硅外延平面型 对于低频放大 特点 •低导通电阻Ron •S-迷你型包装,让精简的设备和通过自动插入磁带包装
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