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UP04216G08SO NPN+NPN Complex Bipolar Transistor 50V 0.1A HEF=160~460 SOT-563 marking 8U switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 0.1A |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | |
| Base-Emitter Input Resistance Ratio (R1/R2) | |
| DC Current Gain(hFE) | 160~460 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 125MW |
| Description & Applications | Features • Silicon NPN epitaxial planar type • Two elements incorporated into one package (transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half • For switching/digital circuits |
| Technical Documentation Download | Read Online |
