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UNR5217GOL NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 22K SOT-323/SC-70 marking 8H digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)160
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsSilicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing
描述与应用NPN硅外延平面型 用于数字电路 ■特性 •成本可降低通过减 员设备和 减少部件的数量 •S-迷你型包装,允许通过自动插入磁带 包装盒包装
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