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2SA1418S-TD PNP transistors(BJT) -180V -700mA/-0.7A 120MHz 140~280 -120mV/-0.12V SOT-89/PCP marking AD high breakdown voltage/highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-160V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
140~280
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-120mV/-0.12V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP/NPN Epitaxial planar silicon transistors High-voltage switching Predriver applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Very small size making it easy to provide highdensity, small-sized hybrid ICs.
描述与应用PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 特点 ·采用FBET,MBIT过程。 ·高击穿电压和大电流的能力。 ·快速开关时间。 ·体积非常小,因此很容易提供高密度,小尺寸的混合集成电路。
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