My order
Share to:  
Location:Home > Stock Inventory > Product Details

HN4B101J PNP+NPN Complex Bipolar Transistor -30V/50V -1A/1.2A 200~500 SOT-153/SMV marking 5K switch and digital circuit application

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-30V/50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-30V/30V
集电极连续输出电流IC Collector Current(IC)-1A/1.2A
截止频率fT Transtion Frequency(fT)
直流电流增益hFE DC Current Gain(hFE)200~500
管压降VCE(sat) Collector-Emitter Saturation Voltage-200mV/170mV
耗散功率Pc Power Dissipation550mW
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max): NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.): NPN tf= 50 ns (typ.) • MOS Gate Drive Applications ,Switching Applications
描述与应用特点 •东芝晶体管的硅PNP/ NPN外延型(PCT工艺) •由于占地面积小,小而薄的封装 •高直流电流增益:HFE=200〜500(IC= -0.12) •低集电极 - 发射极饱和:PNP VCE(星期六)=-0.20 V(最大值):NPN VCE(星期六)= 0.17 V(最大值) •高速开关:PNP tf=45 ns(典型值):NPN tf= 50 ns(典型值) •MOS栅极驱动应用,开关应用
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Working hours: Mon to Sat 8: 00 ~ 22: 00