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HN4B101J PNP+NPN Complex Bipolar Transistor -30V/50V -1A/1.2A 200~500 SOT-153/SMV marking 5K switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -30V/30V |
| 集电极连续输出电流IC Collector Current(IC) | -1A/1.2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 200~500 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | -200mV/170mV |
| 耗散功率Pc Power Dissipation | 550mW |
| Description & Applications | Features • TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) • Small footprint due to a small and thin package • High DC current gain : hFE = 200 to 500 (IC = −0.12 A) • Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max): NPN VCE (sat) = 0.17 V (max) • High-speed switching : PNP tf = 45 ns (typ.): NPN tf= 50 ns (typ.) • MOS Gate Drive Applications ，Switching Applications |
| 描述与应用 | 特点 •东芝晶体管的硅PNP/ NPN外延型（PCT工艺） •由于占地面积小，小而薄的封装 •高直流电流增益：HFE=200〜500（IC= -0.12） •低集电极 - 发射极饱和：PNP VCE（星期六）=-0.20 V（最大值）：NPN VCE（星期六）= 0.17 V（最大值） •高速开关：PNP tf=45 ns（典型值）：NPN tf= 50 ns（典型值） •MOS栅极驱动应用，开关应用 |
