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SI3433DV-T1-E3 MOSFET P-Channel -20V -4.3A 80mohm SOT-163 marking 3A

Model：SI3433DV-T1-E3
Mark / screen / code / typing：3A
Manufacturer：
Date Code：05+nopb 05+ROHS
Package：SOT-163/SOT23-6/TSOP6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	-8V
最大漏极电流Id Drain Current	-4.3A
源漏极导通电阻Rds Drain-Source On-State Resistance	80mΩ@ VGS = -1.8V, ID = -1A
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.45V
耗散功率Pd Power Dissipation	1.1W
Description & Applications	P-Channel 1.8-V (G-S) MOSFET
描述与应用	P沟道1.8-V（G-S）的MOSFET

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