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SI3433DV-T1-E3 MOSFET P-Channel -20V -4.3A 80mohm SOT-163 marking 3A
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
最大漏极电流Id Drain Current | -4.3A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 80mΩ@ VGS = -1.8V, ID = -1A |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.45V |
耗散功率Pd Power Dissipation | 1.1W |
Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
描述与应用 | P沟道1.8-V(G-S)的MOSFET |