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RSE002P03 MOSFET P-Channel -30V -2A 0.9ohm SOT-363 marking WP low on-resistance 4V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.9Ω @-200mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsFeatures Low On-resistance. Small package (EMT3). 4V drive.
描述与应用低导通电阻。 小型封装(EMT3)。 4V驱动器。
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