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SSM3J113TU MOSFET P-Channel -20V -1.7A 0.129ohm SOT-323 marking JJ6 high-speed switch 2V drive low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -1.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.129Ω @-650mA,-4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5V--1.1V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | High Speed Switching Applications •2.0V drive •Low on-resistance: Ron = 449mΩ (max) (@VGS = −2.0 V) Ron = 249mΩ (max) (@VGS = −2.5 V) Ron = 169mΩ (max) (@VGS = −4.0 V) |
| 描述与应用 | 高速开关应用 •2.0V驱动 •低导通电阻RON =449mΩ（最大）（@ VGS=-2.0 V） 罗恩=249mΩ（最大）（@ VGS= -2.5 V） RON =169mΩ（最大）（@ VGS=-4.0 V） |
