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BCW61DLT1 NPN Transistors(BJT) 32V 100mA/0.1A 125MHz 350~700 350mV/0.35V SOT-23/SC-59 marking BD

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
32V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
32V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
125MHz
直流电流增益hFE
DC Current Gain(hFE)
350~700
管压降VCE(sat)
Collector-Emitter Saturation Voltage
350mV/0.35V
耗散功率Pc
Power Dissipation
300mW/0.3W
Description & Applicationsgeneral purpose transistor NPN Silicon
描述与应用通用晶体管 NPN硅
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