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BSH108 MOSFET N-Channel 30V 1.9A SOT-23/SC-59 marking WK2 low noise gain control amplifier

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current1.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage
耗散功率Pd Power Dissipation830mW/0.83W
Description & ApplicationsN-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package
描述与应用N沟道增强型场效应晶体管 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技术。产品可用性: 特点符号快速参考数据 •非常低阈值电压VDS= 20 V •快速开关 •逻辑电平兼容ID=1.05 •超小型表面贴装封装
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