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RT3NHHM NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=80 R1=4.7KΩ R2=47KΩ 150mW/0.15W SOT-363/SC-88/SC70-6 marking NHH switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA
Q1基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio 0.1
Q2基极输入电阻R1 Input Resistance(R1) 4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio 0.1
直流电流增益hFE DC Current Gain(hFE) 80
截止频率fT Transtion Frequency(fT) 200MHz
耗散功率Pc Power Dissipation 150mW/0.15W
Description & Applications Features • Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type • Silicon epitaxial type • Each transistor elements are independent. • Mini package for easy mounting Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用 特点 •复合开关应用硅外延型晶体管,电阻 •硅外延型 •每个晶体管的元素是独立的。 •易于安装的小型封装 应用 •开关,逆变电路,接口电路和驱动器电路应用
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