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BFG10/X NPN Transistors(BJT) 20V 250mA/0.25A 25 SOT-143 marking WMT high powergain

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
8V
集电极连续输出电流IC
Collector Current(IC)
250mA/0.25A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
25
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
400mW/0.4W
Description & ApplicationsNPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.
描述与应用2 GHz的RF功率晶体管NPN 特点 •高功率增益 •高效率 •小尺寸离散功率放大器 •1.9 GHz工作区 •黄金金属确保 出色的可靠性。 应用 •共发射极AB类 手持对讲机的操作 设备在1.9 GHz。 说明 NPN硅平面外延晶体管 封装在塑料中,4 - 针 双射SOT143封装。
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