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PBSS4350SS PNP transistors（BJT） -50V -2.7A 100MHz 520 -340mV/-0.34V SO-8/SOT96-1 marking 4350SS dual low powerswitch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -2.7A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 520 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -340mV/-0.34V |
| 耗散功率Pc PoWer Dissipation | 550mW/0.55W |
| Description & Applications | Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications Dual low power switches (e.g. motors, fans) Automotive |
| 描述与应用 | 特点 低集电极 - 发射极饱和电压VCE监测 高集电极电流能力IC和ICM 高集电极电流IC在高增益（HFE） 由于产生的热量少，效率高 更小的印刷电路板（PCB）面积比传统的晶体管 应用 双低功率开关（例如电机，风机） 汽车 |
