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BB502MBS-TL N MOS FET IC 6V 20MA SOT143 代码 BS UHF RF Amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 6V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 20MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 150MW/0/15W |
| Description & Applications | * Built in Biasing Circuit MOS FET IC . * UHF RF Amplifier. * Built in Biasing Circuit; To reduce using parts cost & PC board space. * ow noise; NF = 1.6 dB typ. at f = 900 MHz * High gain; PG = 22 dB typ. at f = 900 MHz * Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. |
| 描述与应用 | * 内置偏置电路MOS FET的IC。 * UHF射频放大器。 * 内置偏置电路降低零部件的成本与PC板空间。 * 低噪音; NF= 1.6 dB（典型值）。在f =900 MHz的 * 高增益PG= 22分贝典型。在f =900 MHz的 * 耐ESD;内置ESD吸收二极管。承受高达200V在C = 200pF，Rs = 0条件。 |
