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BFP405F NPN Transistors(BJT) 10V 12mA 25GHz 50~150 SOT-543/TSFP-4 marking AL

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
10V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
4.5V
集电极连续输出电流IC
Collector Current(IC)
12mA
截止频率fT
Transtion Frequency(fT)
25GHz
直流电流增益hFE
DC Current Gain(hFE)
50~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
55mW
Description & ApplicationsNPN Silicon RF Transistor For low current applications Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms= 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
描述与应用NPN硅RF晶体管 对于低电流应用 最小封装为1.4×0.8×0.59毫米 噪声系数F =1.25 dB,*(在1.8 GHz时) 杰出GMS=23在1.8 GHz 过渡频率fT= 25 GHz的 黄金金属的高可靠性 SIEGET25 GHz的FT - 线路
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