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UNR31ABGOL PNP Bipolar Digital Transistor (BRT) -50V -80mA 160~460 0.1W/100mW sot-723 marking DF switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-80mA
基极输入电阻R1 Input Resistance(R1)100KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)160~460
截止频率fT Transtion Frequency(fT)80MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & Applications Features •Transistors with built-in Resistor •Silicon PNP epitaxial planer transistor •Suitable for high-density mounting and downsizing of the equipment •Contribute to low power consumption
描述与应用特点 •内置电阻晶体管 •PNP硅外延刨床晶体管 •适用于高密度安装和精简的设备 •有助于低功耗
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