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2SK3948GULBF JFET N-Channel 20v 0.28~0.45mA sot-723 marking 4X low frequency impedance conversion

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.28~0.45ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•Silicon N-channel junction FET •For impedance conversion in low frequency •For electret capacitor microphone Features Low noise voltage NV High voltage gain GV Thin package : TSSSMini3-F1 (1.2 mm × 1.2 mm × 0.33 mm)
描述与应用•硅N沟道结型场效应管 •对于低频阻抗转换中 •对于驻极体电容式麦克风 特点 低噪声电压NV 高电压增益GV TSSSMini3 F1 薄的包装:(1.2毫米×1.2毫米×0.33毫米)
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