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2SK0663GRL N-Channel Junction FET 55V 30MA SOT323 MARKING ZBR Low noise-figure High gate to drain voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage		 55v
栅源极击穿电压V(BR)GS
Gate-Source Voltage		 -55v
漏极电流(Vgs=0V)IDSS
Drain Current		 1~12ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage		 -5v
耗散功率Pd
Power Dissipation		 150mW/0.15W
Description & Applications •Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure (NF) •High gate to drain voltage VGDO •Low noise-figure (NF) •High gate to drain voltage VGDO
描述与应用 •硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数（NF） •高栅漏电压VGDO •低噪声系数（NF） •高栅漏电压VGDO
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