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2N7002A-RTK/P MOSFET N-Channel 60V 115mA/0.115A SOT-23/SC-59 marking WB Suitable for logic level gate drive sources/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 115mA/0.115A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability |
| 描述与应用 | N沟道增强型场效应晶体管 接口和开关应用。 特性 N沟道增强型场效应晶体管 高密度单元设计用于低的源漏极导通电阻） 电压控制小信号开关。 坚固，可靠。 高饱和电流能力 |
