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SIR164DP-T1-GE3 MOSFET N-Channel 30V 50A PowerPAKSO-8 marking R164 high impedance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current 50A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 2.5mΩ@ VGS = 10V, ID = 15A
开启电压Vgs(th) Gate-Source Threshold Voltage1.2~2.5V
耗散功率Pd Power Dissipation6.9W
Description & ApplicationsN-ChAPPLICATIONS • DC/DC • Notebook CPU Coreannel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • New MOSFET Technology Optimized for Ringing Reduction in Switching Application • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC • Notebook CPU Core
描述与应用N-ChAPPLICATIONS的 •DC / DC •笔记本电脑CPU Coreannel的30-V(D-S)的MOSFET 特点 •根据IEC 61249-2-21的无卤素 定义 •第三代TrenchFET®功率MOSFET •新的MOSFET技术优化 振铃减少开关应用 •100%的Rg和UIS测试 •符合RoHS指令2002/95/EC 应用 •DC / DC •笔记本CPU核心
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