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HN7G06FE-A Complex Bipolar Digital Transistor SOT-563 marking 74A switching inverting interface driver circuit

Model：HN7G06FE-A
Mark / screen / code / typing：74A
Manufacturer：
Date Code：11+NOPB
Package：SOT-563
Standard Package：4000
Min Order：10

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Product description

Q1 Collector-Base Voltage(VCBO)	-15V
Q1Collector-Emitter Voltage(VCEO)	-12V
Q1Collector Current(IC) R1/R2	-500MA/-0.5A
Q2 Collector-Base Voltage(VCBO)	50V
Q2 Collector-Emitter Voltage(VCEO)	50V
Q2 Collector Current(IC)	100MA/0.1A
Q1 Input Resistance(R1)
Q1Base-Emitter Resistance(R2)
Q1 Resistance Ratio
Q2 Input Resistance(R1)	47KΩ
Q2Base-Emitter Resistance(R2)	47KΩ
(R1/R2) Q2 Resistance Ratio	1
hFE DC Current Gain(hFE) Q1/Q2	30~1000/80
fT Transtion Frequency(fT) Q1/Q2	130MHZ / 250MHZ
Pc Power Dissipation	0.2W
Description & Applications	TOSHIBA Multichip Discrete Device • Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications • Combining transistor and BRT reduces the parts count, enabling the design of more compact equipment with a simpler system configuration. Q1: 2SA1955F equivalent Q2: RN1104F equivalent

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