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HN7G06FE-A Complex Bipolar Digital Transistor SOT-563 marking 74A switching inverting interface driver circuit
| Q1 Collector-Base Voltage(VCBO) | -15V |
| Q1Collector-Emitter Voltage(VCEO) | -12V |
| Q1Collector Current(IC) R1/R2 | -500MA/-0.5A |
| Q2 Collector-Base Voltage(VCBO) | 50V |
| Q2 Collector-Emitter Voltage(VCEO) | 50V |
| Q2 Collector Current(IC) | 100MA/0.1A |
| Q1 Input Resistance(R1) | |
| Q1Base-Emitter Resistance(R2) | |
| Q1 Resistance Ratio | |
| Q2 Input Resistance(R1) | 47KΩ |
| Q2Base-Emitter Resistance(R2) | 47KΩ |
| (R1/R2) Q2 Resistance Ratio | 1 |
| hFE DC Current Gain(hFE) Q1/Q2 | 30~1000/80 |
| fT Transtion Frequency(fT) Q1/Q2 | 130MHZ / 250MHZ |
| Pc Power Dissipation | 0.2W |
| Description & Applications | TOSHIBA Multichip Discrete Device
• Power Management Switch Applications, Inverter
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
• Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
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