HN4A51J PNP+PNP Complex Bipolar Transistor -120V -100mA HEF=200~700 SOT-153/SMV marking 34 switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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HN4A51J PNP+PNP Complex Bipolar Transistor -120V -100mA HEF=200~700 SOT-153/SMV marking 34 switch and digital circuit application

Model：HN4A51J
Mark / screen / code / typing：34
Manufacturer：
Date Code：12+ROHS
Package：SOT-153/SMV
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	-120V
V(BR) CEO Collector-Emitter Voltage	-120V
Collector Current(IC)	-100MA/-0.1A
Transtion Frequency(fT)	100MHZ
DC Current Gain(hFE)	200~700
VCE(sat) Collector-Emitter Saturation Voltage	0.3V
Power Dissipation (Pd)	0.3W
Description & Applications	Features• TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)• High voltage : VCEO = −120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier
Technical Documentation Download	Read Online

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