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2SC5714 NPN 40V 4A HEF=400~1000 SOT89 MARKING 2E

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)		 40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)		 20V
集电极连续输出电流IC
Collector Current(IC)		 4A
截止频率fT
Transtion Frequency(fT)		  
直流电流增益hFE
DC Current Gain(hFE)		 400~1000
管压降VCE（sat）
Collector-Emitter Saturation Voltage		 0.15V
耗散功率Pc
Power Dissipation		 1.0W
Description & Applications TOSHIBA Transistor Silicon NPN Epitaxial Type. High-Speed Switching Applications. DC-DC Converter Applications. Strobe Applications. *High DC current gain: hFE = 400 to 1000 (IC = 0.5 A). * Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max). * High-speed switching: tf = 90 ns (typ.).
描述与应用 东芝晶体管NPN硅外延型。 高速开关应用。 DC-DC转换器应用。 频闪应用。 *高直流电流增益：HFE=400至1000（IC= 0.5 A）。 *低集电极 - 发射极饱和电压VCE（sat）= 0.15 V（最大值）。 *高速开关：TF=90 ns（典型值）。
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