BST84 MOSFET N-Channel 200V 250mA/0.25A SOT-89 marking KN high density battery designvery low RDS/voltage control small signal switch|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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BST84 MOSFET N-Channel 200V 250mA/0.25A SOT-89 marking KN high density battery designvery low RDS/voltage control small signal switch

Model：BST84
Mark / screen / code / typing：KN
Manufacturer：
Date Code：05+ 05+
Package：SOT-89/SC-62
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	200V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	250mA/0.25A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	6Ω/Ohm @250mA,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.8-2.8V
耗散功率Pd Power Dissipation	1W
Description & Applications	N-channel enhancement mode vertical D-MOS transistor • Direct interface to C-MOS, TTL,etc. • High-speed switching • No second breakdown
描述与应用	N沟道增强模式垂直D-MOS晶体管 •直接连接到C-MOS，TTL等 •高速开关 •无二次击穿

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