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BCP52-16 PNP transistors(BJT) -60V -1A 115MHz 100~250 -500mV/-0.5V SOT-223/TO-261AA marking BCP52 low voltage/high current

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−60V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
115MHz
直流电流增益hFE
DC Current Gain(hFE)
100~250
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
1.3W
Description & ApplicationsPNP medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits.
描述与应用PNP中等功率晶体管 特点 •高电流(最大1 A) •低电压(最大80 V) •中等功率(最大1.3 W)。 应用 •音频,电话和汽车应用 •厚薄膜电路。
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