My order
Share to:  
Location：Home > Stock Inventory > Product Details

SSM6J213FE MOSFET P-Channel -20V -2.6A 250mohm SOT-563 marking PS power managementswitch 1.5V drive low on-resistance

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-2.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		250mΩ@ VGS = -1.5V, ID = -250mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.3~-1.0V
耗散功率Pd
Power Dissipation		700mW/0.7W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
描述与应用东芝场效应晶体管的硅P沟道MOS型（U-MOSⅥ） ○电源管理开关应用 •1.5-V驱动器 •低导通电阻：RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
List of related models

Record / license number：粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00