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SSM6J213FE MOSFET P-Channel -20V -2.6A 250mohm SOT-563 marking PS power managementswitch 1.5V drive low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
250mΩ@ VGS = -1.5V, ID = -250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.3~-1.0V
耗散功率Pd
Power Dissipation
700mW/0.7W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
描述与应用东芝场效应晶体管的硅P沟道MOS型(U-MOSⅥ) ○电源管理开关应用 •1.5-V驱动器 •低导通电阻:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
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