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UP04214GOLBF Complex Bipolar Transistor 50V 100mA R1=10KΩ R2=47KΩ SOT563 MARKING BR

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Product description

V(BR) CBO

Collector-Base Voltage

 50V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  0.1A
Input Resistance(R1)  10KΩ
Base-Emitter Resistance(R2)  47KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  0.21
DC Current Gain(hFE)  80
Transtion Frequency(fT)  150MHZ
Power Dissipation (Pd)  125MW
Description & Applications  For switching/digital circuits
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
Technical Documentation Download Read Online
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