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UP04116G08SO Complex Bipolar Transistor -50V -100mA HEF=160~460 R1=4.7KΩ SOT563 MARKING 6U

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100MA
 Input Resistance(R1)  4.7KΩ
Base-Emitter Resistance(R2)  
Base-Emitter Input Resistance Ratio (R1/R2)  
DC Current Gain(hFE)  160~460
Transtion Frequency(fT)  80MHZ
Power Dissipation (Pd)  125MW
Description & Applications  For switching/digital circuits
 Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
Technical Documentation Download Read Online

 

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