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CPH5803 N MOSFET+SBD SOT153 marking QD

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Product description
MOSFET TYPE  N-Channel Silicon MOSFET
MOS Drain-Source Voltage (Vds)  20V

Vgs(±)

MOS Gate-Source Voltage

  10V
MOS Drain Current  （Id）  1.5A

Rds(on)

MOS Drain-Source On-State Resistance

   ID=1A, VGS=4V RDS=160mΩ~210mΩ
 ID=0.5A, VGS=2.5V RDS=200mΩ~280mΩ
 ID=0.1A, VGS=1.8V RDS=280mΩ~390mΩ

Vgs(th)

MOS Gate-Source Threshold Voltage

  
DIODES TYPE  Schottky Barrier Diode
DIODE Reverse Voltage  (Vr)  15V
DIODE Average Rectified Current (Io)  1A
DIODE Forward Voltage(Vf)  0.4V
Power Dissipation (Pd)  0.8W
Description & Applications  [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
Technical Documentation Download Read Online
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