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SSM3J01T MOSFET P-Channel -30V -1.7A 0.3ohm SOT-23 marking DE high-speed switch power managementswitch
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -1.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.3Ω @-850mA,-4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.6V--1.1V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | Power Management Switch High Speed Switching Applications Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) Ron = 0.6 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage |
| 描述与应用 | 电源管理开关 高速开关应用 小包装 低导通电阻RON =0.4Ω（最大）（@ VGS=-4 V） 罗恩= 0.6Ω（最大）（@ VGS=-2.5 V） 低栅极阈值电压 |
