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SSM6P15FE Complex FET -30V -100mA/-0.1A SOT-563/ES6 marking DQ high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-100mA/-0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance		12Ω@ VGS = -4V, ID = -10mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.1~-1.7V
耗散功率Pd
Power Dissipation		150mW/0.15W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type ●High Speed Switching Applications ●Analog Switch Applications ● Small package ● Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V)
描述与应用东芝场效应晶体管硅P沟道MOS类型 ●高速开关应用 ●模拟开关应用 ●小型封装 ●低导通电阻RON =12Ω（最大）（@ VGS=-4 V）    RON=32Ω（最大）（@ VGS=-2.5 V）
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