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SIB911DK-T1-GE3 Complex FET -20V -2.6A SC75-6L marking DAW load switch power MOSFET
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -8V |
| 最大漏极电流Id Drain Current | -2.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 560mΩ@ VGS = -1.8V, ID = -180mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4~-1V |
| 耗散功率Pd Power Dissipation | 3.1W |
| Description & Applications | Dual P-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 • Trench FET Power MOSFET • New Thermally Enhanced Power PAK SC-70 Package - Small Footprint Area APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices |
| 描述与应用 | 双P沟道12-V（D-S）的MOSFET 特点 •根据IEC 61249-2-21的无卤素 •沟槽FET功率MOSFET •新的耐热增强型电源PAK SC-70封装 - 小占位面积 应用 •负荷开关，PA，用于便携式设备的开关和电池开关 |
