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HN1C26FS NPN+NPN Complex Bipolar Transistor 60V 100mA HEF=120~400 SOT-963/FS6 marking 7H switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA/0.1A |
| Transtion Frequency(fT) | 60MHZ |
| DC Current Gain(hFE) | 120~400 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.25V |
| Power Dissipation （Pd） | 50MW |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Frequency General-Purpose Amplifier Applications
• Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
• High voltage : VCEO = 50 V
• High current : IC = 100 mA (max)
• High hFE : hFE = 120 to 400
• Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
|
| Technical Documentation Download | Read Online |
