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HN1C26FS NPN+NPN Complex Bipolar Transistor 60V 100mA HEF=120~400 SOT-963/FS6 marking 7H switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

  50V

V(BR) CEO

Collector-Emitter Voltage

  50V
Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  60MHZ
DC Current Gain(hFE)  120~400

VCE (sat)

Collector-Emitter Saturation Voltage

  0.25V
Power Dissipation （Pd）  50MW
Description & Applications  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 
Frequency General-Purpose Amplifier Applications 
 • Two devices are incorporated into a fine-pitch, small-mold (6-pin) 
package. 
• High voltage : VCEO = 50 V 
• High current : IC = 100 mA (max) 
• High hFE : hFE = 120 to 400 
• Excellent hFE linearity 
 : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 
 
Technical Documentation Download Read Online
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