HN4A08J PNP+PNP Complex Bipolar Transistor -30V -800mA HEF=100~320 SOT-153/SMV marking 36 switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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HN4A08J PNP+PNP Complex Bipolar Transistor -30V -800mA HEF=100~320 SOT-153/SMV marking 36 switch and digital circuit application

Model：HN4A08J
Mark / screen / code / typing：36
Manufacturer：
Date Code：12+ROHS
Package：SOT-153/SMV
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	-30V
V(BR) CEO Collector-Emitter Voltage	-25V
Collector Current(IC)	-0.8A
Transtion Frequency(fT)	120MHZ
DC Current Gain(hFE)	100~320
VCE(sat) Collector-Emitter Saturation Voltage	-0.4V
Power Dissipation (Pd)	0.3W
Description & Applications	Features• TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)• High DC Current Gain : hFE = 100~320 • Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA) • Low Frequency Power Amplifer Applications • Power Switching
Technical Documentation Download	Read Online

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