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SSM6J207FE MOSFET P-Channel -30V -1.4mA 491mohm SOT-563 marking KT high-speed switch 4V 驱动 low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-1.4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
491mΩ@ VGS = -4V, ID = -400mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.2~-2.6V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ○ High-Speed Switching Applications • 4 V drive • Low ON-resistance:Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V)
描述与应用东芝场效应晶体管的硅P沟道MOS类型 ○高速开关应用 •4 V驱动器 •低导通电阻:Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V)
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