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SSM6N55NU Complex FET 30V 4A UDFN6B marking NN5 power managementswitch DC/DC converter

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Product description
最大源漏极电压Vds
Drain-Source Voltage		30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		4A
源漏极导通电阻Rds
Drain-Source On-State Resistance		46mΩ@ VGS = 10V, ID = 4000mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		1.3~2.5V
耗散功率Pd
Power Dissipation		1W
Description & ApplicationsMOSFETs Silicon N-Channel MOS •Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V)
描述与应用MOSFET的硅N沟道MOS •应用程序 •电源管理开关 •DC-DC转换器 2。特点 （1）4.5V栅极驱动电压。 （2）低漏源导通电阻  RDS（ON）= 46MΩ（最大）（@ VGS=10 V） RDS（ON）=64毫欧（最大值）（@ VGS=4.5 V）
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