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2SK3582CT-B JFET N-Channel 20v 0.08~0.3mA CST3 marking 97
| 最大源漏极电压Vds Drain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 0.08~0.3ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.1~-0.65v |
| 耗散功率Pd Power Dissipation | 80mw |
| Description & Applications | •Silicon N-Channel Junction FET Electret condenser microphone - Ideal for Mini Microphone for CSP package of 1.0 × 0.6 × 0.38 mmt • The excellent reduced voltage characteristic · We have excellent transient response |
| 描述与应用 | •硅N沟道结型场效应管 驻极体电容式麦克风 - 非常适于微型麦克风CSP封装的1.0×0.6×0.38亿吨 •优秀的降低电压特性 ·出色的瞬态响应 |
