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SSM6N24TU Complex FET 30V 500mA/0.5A SOT-363/SC70-6/UF6 marking NF high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
500mA/0.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
145mΩ@ VGS = 4.5V, ID = 500mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.1V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V)
描述与应用东芝场效应晶体管硅N沟道MOS类型(U-MOSIII) 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻RON =145mΩ(最大)(@ VGS= 4.5 V) RON=180mΩ(最大)(@ VGS= 2.5 V)
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