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2SA1203 PNP transistors（BJT） -30V -1.5A 120MHz 100~200 -2V SOT-89/SC-62 marking HO amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | -1.5A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -2V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | Silicon PNP Epitaxial Type (PCT process) suitable for output stage of 3 watts amplifier； PC=1~2w; small flat package; complementary to 2SC2883 |
| 描述与应用 | 硅PNP外延式（PCT的进程） 适用于3瓦放大器的输出级; PC= 1〜2W; 小扁平封装; 2SC2883互补 |
