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TPCF8302 Complex FET -20V -3A 1206-8/vs-8 marking F5B low Rds
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 59mΩ@ VGS = -4.5V, ID = -1500mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5~-1.2V |
| 耗散功率Pd Power Dissipation | 530mW/0.53W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型（U-MOS四） 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDS（ON）= 44mΩ（典型值） •高正向转移导纳：| YFS|=6.2 S（典型值） •低漏电流：IDSS= -10μA（最大）（VDS=-20 V） •增强模式：VTH =-0.5〜-1.2 V （VDS= -10 V，ID= -200μA） |
