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SSM6N36FE Complex FET 20V 500mA/0.5A SOT-563/ES6 marking NX high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
500mA/0.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
630mΩ@ VGS = 5V, ID = 200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.35~1.0V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type •High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •1.5-V驱动器 •低导通电阻:RON= 1.52Ω(最大值)(@ VGS= 1.5 V) :RON =1.14Ω(最大)(@ VGS=1.8 V) :RON =0.85Ω(最大值)(@ VGS=2.5 V) RON= 0.66Ω(最大)(@ VGS=4.5 V) :RON =0.63Ω(最大)(@ VGS=5.0 V)
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