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SSM6L11TU Complex FET 20V/-20V 500mA/-500mA SOT-363/SC70-6/UF6 marking K8 high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/12V
最大漏极电流Id
Drain Current
500mA/-500mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
145mΩ@ VGS = 4.0V, ID = 250mA/ 260mΩ@ VGS = -4V, ID = -250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.5~1.1V/-0.5~-1.1V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
描述与应用东芝场效应晶体管的硅P/ N沟道MOS类型 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻Q1:RDS(ON)=395mΩ(最大)(@ VGS= 1.8 V) Q2:RDS(ON)=430mΩ(最大)(@ VGS=-2.5 V)
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